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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1439 DESCRIPTION *High Voltage *High Switching Speed *Built-in damper diode *Wide Area of Safe Operation APPLICATIONS *Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCES VEBO IC ICP IBP PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Peak Collector Power Dissipation @TC=25 PC Collector Power Dissipation @Ta=25 Junction Temperature Storage Temperature Range VALUE 1500 1500 5 3 10 3.5 50 W 2.5 150 -65-150 UNIT V V V A A A Tj Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)EBO VCE(sat) VBE(sat) hFE PARAMETER Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain CONDITIONS IE= 500mA; IC= 0 IC= 2A; IB= 0.75A IC= 2A; IB= 0.75A IC= 2A ; VCE= 10V VCB= 750V; IE= 0 ICBO Collector Cutoff Current VCB= 1500V; IE= 0 VECF fT C-E Diode Forward Voltage Transition Frequency IF= 2A IC= 0.5A ; VCE= 10V 2 4 MIN 5 2SD1439 TYP MAX UNIT V 5.0 1.5 12 50 1.0 2.2 V V A mA V MHz Switching Times ts tf Storage Time IC= 2A; IB= 0.75A; Lleak= 5H Fall Time 0.75 s 7 s isc Websitewww.iscsemi.cn |
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